МОП-транзистор, P Канал, 50 мА, -40 В, 180 Ом, -20 В, -2.5 В.The 3N163-E3 is a -40V P-channel Enhancement Mode MOSFET designed for analogue switch and pre-amplifier applications where high speed and low parasitic capacitances are required...
МОП-транзистор, N Канал, 170 мА, 100 В, 6 Ом, 10 В DC, 0.8 В.The BSS123LT1G is a N-channel Power MOSFET with drain source voltage at 100VDC and drain current at 170mA...