Brand: VISHAY
Силовой МОП-транзистор, N Канал, 7.8 А, 800 В, 1.2 Ом, 10 В, 4 В.The IRFPE50PBF is a 800V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology...
431 ₽
Brand: VISHAY
Силовой МОП-транзистор, N Канал, 6.7 А, 900 В, 1.6 Ом, 10 В, 4 В.The IRFPF50PBF is a 900V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance...
0 ₽
Brand: VISHAY
Силовой МОП-транзистор, N Канал, 4.3 А, 1 кВ, 3.5 Ом, 10 В, 4 В.The IRFPG40PBF is a 1000V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance...
415 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 36 А, 500 В, 130 мОм, 10 В, 4 В.The IRFPS37N50APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching applications...
0 ₽