Brand: STMICROELECTRONICS
МОП-транзистор, N Канал, 9 А, 200 В, 400 мОм, 10 В, 3 В.The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company's consolidated strip layout based MESH OVERLAY process which matches and improv..
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 18 А, 200 В, 180 мОм, 10 В, 4 В.The IRF640PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all comme..
102 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 1.5 А, 400 В, 3.6 Ом, 10 В, 4 В.The IRF710PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all comme..
72 ₽
