Транзисторы - МОП-транзисторы

Силовой МОП-транзистор, N Канал, 3 А, 900 В, 4.8 Ом, 10 В, 3.75 В...

МОП-транзистор, N Канал, 40 А, 30 В, 22 мОм, 10 В, 1.7 В...

МОП-транзистор, N Канал, 50 А, 100 В, 0.025 Ом, 10 В, 3 В.The STP40NF10 is a N-channel low gate charge STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics an..

МОП-транзистор, N Канал, 40 А, 100 В, 0.028 Ом, 10 В, 1.7 В.The STP40NF10L is a 100V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency i..

МОП-транзистор, N Канал, 20 А, 200 В, 38 мОм, 10 В, 3 В...

Силовой МОП-транзистор, N Канал, 33 А, 650 В, 0.07 Ом, 10 В, 4 В...

Силовой МОП-транзистор, Mdmesh DM2, N Канал, 34 А, 600 В, 0.085 Ом, 10 В, 4 В...

Силовой МОП-транзистор, N Канал, 35 А, 650 В, 0.067 Ом, 10 В, 4 В.The STP45N65M5 is a 650V N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The MOSFET has extremely l..

МОП-транзистор, N Канал, 26 А, 60 В, 28 мОм, 10 В, 3 В...

Силовой МОП-транзистор, N Канал, 4 А, 1.5 кВ, 5 Ом, 30 В, 4 В.The STP4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per a..

МОП-транзистор, N Канал, 2.5 А, 525 В, 2.1 Ом, 10 В, 3.75 В...

Силовой МОП-транзистор, N Канал, 3.8 А, 620 В, 1.7 Ом, 10 В, 3.75 В...