Транзисторы - МОП-транзисторы

МОП-транзистор, P Канал, 12 А, -100 В, 300 мОм, -10 В, 4 В...

МОП-транзистор, P Канал, 19 А, -100 В, 200 мОм, -10 В, -4 В.The IRF9540PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide accep..

P CHANNEL MOSFET, -100V, 19A D2-PAK...

МОП-транзистор, P Канал, 1.75 А, -200 В, 3 Ом, -10 В, -4 В.The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device r..

P CH MOSFET, -200V, 1.8A, D2-PAK...

МОП-транзистор, P Канал, 3.5 А, -200 В, 1.5 Ом, -10 В, -4 В...

МОП-транзистор, P Канал, -6.5 А, -200 В, 800 мОм, -10 В, 4 В.The IRF9630PBF is a -200V single P-channel HEXFET® Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferre..

P CHANNEL MOSFET, -200V, 6.5A, D2-PAK...

MOSFET, P CHANNEL, -200V, 0.8OHM, -6.5A, TO-263-3...

МОП-транзистор, P Канал, 11 А, -200 В, 500 мОм, -10 В, -4 В.The IRF9640PBF is a -200V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred ..