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МОП-транзистор, N Канал, 1.7 А, 45 В, 0.25 Ом, 5 В, 500 мВ.The VNS1NV04DPTR-E is a 40V Fully Auto Protected Power MOSFET formed by two monolithic OMNIFET II chips. The OMNIFET II is designed in VIPower™ M0-3 technology intended for replacement of standard power MOSFETS in DC to 50KHz applicati..
357 ₽
Brand: VISHAY
Биполярный транзистор, N Канал, 180 А, 100 В, 6.5 мОм, 10 В.The VS-FB180SA10P is a 5th generation high current density N channel Power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness...
0 ₽
Brand: VISHAY
Биполярный транзистор, N Канал, 190 А, 100 В, 0.0054 Ом, 10 В, 3.3 В.The VS-FB190SA10 is a 100V N-channel Power MOSFET, high current density power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design and very low on-resistance. The iso..
0 ₽
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