FDC6301N..

Двойной МОП-транзистор, Двойной N Канал, 220 мА, 25 В, 3.1 Ом, 4.5 В, 850 мВ Новинка.

The FDC6301N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. It is very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this N-channel FET's can replace several digital transistors, with a variety of bias resistors.

• Very low level gate drive requirements allowing direct operation in 3V circuits
• Gate-source Zener for ESD ruggedness
• -0.5 to 8V Gate to source voltage
• 0.22A Continuous drain/output current
• 0.5A Pulsed drain/output current