Меню
Корзина

МОП-транзисторы

МОП-транзистор, N Канал, 240 А, 40 В, 0.00059 Ом, 10 В, 1.75 В Новинка...
611 ₽
МОП-транзистор, N Канал, 4.3 А, 60 В, 0.038 Ом, 10 В, 2 В...
43 ₽
МОП-транзистор, P Канал, -5.8 А, -20 В, 0.026 Ом, -4.5 В, -1 В Новинка.The FDC608PZ is a 2.5V specified P-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been especially tailored to minimize the ON-state res..
0 ₽
Двойной МОП-транзистор, Двойной N Канал, 220 мА, 25 В, 3.1 Ом, 4.5 В, 850 мВ Новинка.The FDC6301N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. It is very high density process is especially tailored to ..
0 ₽
Двойной МОП-транзистор, Двойной N Канал, 680 мА, 25 В, 0.33 Ом, 4.5 В, 800 мВ Новинка.The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to ..
0 ₽
Двойной МОП-транзистор, N и P Канал, 2.5 А, 30 В, 0.073 Ом, 10 В, 1.8 В Новинка.The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior ..
0 ₽
МОП-транзистор, N Канал, 5.5 А, 30 В, 0.023 Ом, 10 В, 1.4 В Новинка.The FDC645N is a 30V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fa..
0 ₽
МОП-транзистор, P Канал, -4 А, -30 В, 0.041 Ом, -10 В, -1.7 В Новинка.The FDC658P is a logic level single P-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been especially tailored to minimize the ON-state r..
72 ₽
Двойной МОП-транзистор, Двойной N Канал, 1.2 А, 100 В, 0.285 Ом, 10 В, 3.2 В...
185 ₽
МОП-транзистор, N Канал, 8 А, 30 В, 0.012 Ом, 10 В, 1.6 В...
105 ₽
МОП-транзистор, N Канал, 7.6 А, 200 В, 0.3 Ом, 10 В, 3 В...
0 ₽
МОП-транзистор, N Канал, 6.8 А, 100 В, 0.124 Ом, 10 В, 2.8 В...
79 ₽
Показано с 133 по 144 из 1316 (всего 110 страниц)