Brand: ON SEMICONDUCTOR
БТИЗ транзистор, 30 А, 1.75 В, 117 Вт, 600 В, TO-220, 3 вывод(-ов).The NGTG15N60S1EG is a 600V Insulated Gate Bipolar Transistor (IGBT) well suited for motor drive control and other hard switching applications. The IGBT features a robust and cost effective Non-Punch Through (NPT) Trench construction..
0 ₽
Brand: ON SEMICONDUCTOR
БТИЗ транзистор, UPS и солнечное приложение, 70 А, 1.7 В, 300 Вт, 650 В, TO-247, 3 вывод(-ов)...
628 ₽
Brand: STMICROELECTRONICS
БТИЗ транзистор, 20 А, 1.55 В, 115 Вт, 650 В, TO-263, 3 вывод(-ов)...
248 ₽