Brand: STMICROELECTRONICS
БТИЗ транзистор, 60 А, 2.5 В, 200 Вт, 600 В, TO-247, 3 вывод(-ов).The STGW30NC60WD is a 600V Ultra Fast IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in HF, SMPS and PF..
679 ₽
Brand: STMICROELECTRONICS
БТИЗ транзистор, 63 А, 1.3 кВ, 250 Вт, 1.3 кВ, TO-247, 3 вывод(-ов).The STGW38IH130D is a 1300V Very Fast IGBT that developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited f..
440 ₽
Brand: STMICROELECTRONICS
БТИЗ транзистор, 80 А, 2.5 В, 250 Вт, 600 В, TO-247, 3 вывод(-ов).The STGW39NC60VD is a 600V Very Fast IGBT that utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited for UPS, high frequenc..
577 ₽
Brand: STMICROELECTRONICS
БТИЗ транзистор, 80 А, 1.85 В, 468 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)...
1 232 ₽
Brand: STMICROELECTRONICS
БТИЗ транзистор, 80 А, 2.8 В, 240 Вт, 1.2 кВ, TO-247, 3 вывод(-ов).The STGW40N120KD is a 1200V short-circuit Rugged IGBT with ultrafast diode that utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Improved swi..
0 ₽
Brand: STMICROELECTRONICS
БТИЗ транзистор, 80 А, 2.5 В, 260 Вт, 600 В, TO-247, 3 вывод(-ов)...
1 400 ₽
Brand: STMICROELECTRONICS
БТИЗ транзистор, 30 А, 1.85 В, 259 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)...
503 ₽