Brand: VISHAY
Силовой МОП-транзистор, N Канал, 4.1 А, 800 В, 3 Ом, 10 В, 4 В.The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferre..
0 ₽
Brand: VISHAY
Силовой МОП-транзистор, N Канал, 3.1 А, 1 кВ, 5 Ом, 10 В, 4 В.The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness...
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 1.7 А, 60 В, 200 мОм, 10 В, 4 В.The IRFD014PBF is a 60V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case s..
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 2.5 А, 60 В, 100 мОм, 10 В, 4 В.The IRFD024PBF is a 60V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case s..
99 ₽