Транзисторы - МОП-транзисторы

МОП-транзистор, N Канал, 1 А, 100 В, 540 мОм, 10 В, 4 В.The IRFD110PBF is a N-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness...

МОП-транзистор, N Канал, 1.3 А, 100 В, 270 мОм, 10 В, 4 В.The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case..

МОП-транзистор, N Канал, 600 мА, 200 В, 1.5 Ом, 10 В, 4 В...

МОП-транзистор, N Канал, 1.3 А, 200 В, 800 мОм, 10 В, 4 В...

МОП-транзистор, P Канал, 1.6 А, -60 В, 280 мОм, -10 В, -4 В...

МОП-транзистор, P Канал, 700 мА, -100 В, 1.2 Ом, -10 В, -4 В.The IRFD9110PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable..

МОП-транзистор, P Канал, 1 А, -100 В, 600 мОм, -10 В, -4 В...

P CHANNEL MOSFET, -200V, 400mA HD-1...