MC1413BDR2G

Массив биполярных транзисторов, NPN, 1.1 В, 500 мА, 1000 hFE, SOIC.

The MC1413BDR2G is a NPN high current Darlington Bipolar Transistor Array suitable for driving lamps, relays or printer hammers in a variety of industrial and consumer applications. It has high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500mA permit them to drive incandescent lamps. The device with a 2.7kR series input resistor is well suited for systems utilizing a 5V TTL or CMOS logic.

• High voltage
• -40 to 85°C Operating ambient temperature range