Биполярные транзисторы

Биполярный транзистор, NPN, 15 В, 400 МГц, 700 мВт, 1 А, 300 hFE...

Биполярный транзистор, NPN, 40 В, 300 МГц, 800 мВт, 600 мА, 300 hFE.The 2N2219A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-39 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful cur..

Биполярный транзистор, NPN, 40 В, 300 МГц, 500 мВт, 600 мА, 300 hFE.The 2N2222A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-18 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful cur..

Биполярный транзистор, PNP, -60 В, 200 МГц, 600 мВт, -600 мА, 50 hFE...

Биполярный транзистор, PNP, -60 В, 200 МГц, 400 мВт, -600 мА, 300 hFE...

Биполярный транзистор, NPN, 80 В, 100 МГц, 5 Вт, 1 А, 100 hFE...

Биполярный транзистор, NPN, 60 В, 3 МГц, 115 Вт, 15 А, 70 hFE.The 2N3055 from STMicroelectronics is a through hole complementary power transistor in TO-3 package. This device manufactured in planar technology with "base island" layout and suitable for power linear and switching applications...

Биполярный транзистор, NPN, 60 В, 6 МГц, 115 Вт, 15 А, 2.5 hFE.The 2N3055AG is a 60V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC c..

Биполярный транзистор, универсальный, NPN, 60 В, 2.5 МГц, 115 Вт, 15 А, 20 hFE.The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications...

Биполярный транзистор, NPN, 300 В, 15 МГц, 1 Вт, 1 А, 40 hFE...

Биполярный транзистор, NPN, 250 В, 15 МГц, 1 Вт, 1 А, 160 hFE...