Brand: VISHAY
МОП-транзистор, N Канал, 8 А, 500 В, 850 мОм, 10 В, 4 В.The IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for al..
0 ₽
Brand: VISHAY
МОП-транзистор, P Канал, 6 А, -100 В, 600 мОм, -10 В, -4 В.The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide accept..
93 ₽
Brand: VISHAY
МОП-транзистор, P Канал, 12 А, -100 В, 300 мОм, -10 В, -4 В.The IRF9530PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred ..
84 ₽
Brand: VISHAY
МОП-транзистор, P Канал, 19 А, -100 В, 200 мОм, -10 В, -4 В.The IRF9540PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide accep..
129 ₽
Brand: VISHAY
МОП-транзистор, P Канал, 1.75 А, -200 В, 3 Ом, -10 В, -4 В.The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device r..
84 ₽
