Диоды - Карбидокремниевые Шоттки

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 20 А, 64 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Двойной Общий Анод, 650 В, 20 А, 25 нКл, TO-247 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reve..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 100 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 73 нКл, TO-247 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recov..

Карбидокремниевый диод Шоттки, Двойной Общий Катод, 1.2 кВ, 40 А, 120 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switch..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 40 А, 119 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 50 А, 252 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 50 А, 147 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 6 А, 22 нКл, QFN Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery ..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 12 А, 40 нКл, QFN Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 9.2 А, 37 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..