Диоды - Карбидокремниевые Шоттки

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 6 А, 22 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching character..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 8 А, 27 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching character..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 34 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 12 А, 40 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 16 А, 52 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 20 А, 64 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 100 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 34 нКл, TO-220FP.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 20 А, 64 нКл, TO-220FP.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 34 нКл, TO-220AC.The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate..

Карбидокремниевый диод Шоттки, SIC, Серия 600V, Одиночный, 600 В, 10 А, 12 нКл, TO-220AC...