Диоды

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 20 А, 64 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 100 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 34 нКл, TO-220FP.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 20 А, 64 нКл, TO-220FP.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..

Диод слабых сигналов, Двойной Последовательный, 100 В, 250 мА, 1.4 В, 400 нс, 3 А.The FLLD261 is a high conductance low leakage Small Signal Diode for general usage and suitable for many different applications.-55 to 150°C Storage and operating junction temperature range..

Выпрямитель Шоттки, 100 В, 12 А, Одиночный, TO-277, 3 вывод(-ов), 670 мВ...

Выпрямитель Шоттки, 50 В, 15 А, Одиночный, TO-277, 3 вывод(-ов), 510 мВ...

Выпрямитель Шоттки, 100 В, 20 А, Одиночный, TO-277, 3 вывод(-ов), 660 мВ...