Меню
Корзина

Диоды

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 74 нКл, TO-263 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recov..
942 ₽
Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 8 А, 55 нКл, TO-252.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..
721 ₽
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 34 нКл, TO-252.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..
433 ₽
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 25 нКл, TO-252 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recov..
504 ₽
Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 10 А, 62 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..
1 686 ₽
Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 15 А, 95 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..
1 662 ₽
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 16 А, 52 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..
969 ₽
Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 20 А, 120 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..
1 540 ₽
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 20 А, 64 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..
1 123 ₽
Карбидокремниевый диод Шоттки, Двойной Общий Анод, 650 В, 20 А, 25 нКл, TO-247 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reve..
954 ₽
Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 30 А, 175 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..
0 ₽
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 100 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..
1 184 ₽
Показано с 1897 по 1908 из 6144 (всего 512 страниц)