ИК Излучатели

ИК излучатель, 16 °, T-1 (3mm), 100 мА, 1.3 В, 800 нс, 800 нс...

ИК излучатель, 18 °, T-1 (3mm), 100 мА, 1.3 В, 800 нс, 800 нс...

IR EMITTER, 950NM, T-1 3/4, THROUGH HOLE...

ИК излучатель, 15 °, T-1 3/4 (5mm), 150 мА, 1.3 В, 800 нс, 800 нс...

ИК излучатель, 22 °, T-1 3/4 (5mm), 100 мА, 1.3 В, 800 нс, 800 нс.The TSUS5400 is an Infrared Emitting Diode with 950nm emitting diode in GaAs technology moulded in a blue-grey tinted plastic package. It is suitable for high pulse current operation and good spectral matching with Si photodetectors...

IR EMITTER, 950NM, T-1 3/4, THROUGH HOLE...

ИК излучатель, 44 °, T-1 3/4 (5mm), 150 мА, 1.3 В, 800 нс, 800 нс...

IR EMITTER, 950NM, T-1 3/4, THROUGH HOLE...

ИК излучатель, 22 °, T-1 (3mm), 100 мА, 1.6 В, 15 нс, 15 нс...

IR EMITTER, 940NM, 7.62 X 7.62 X 4.6MM...

ИК излучатель, высокоскоростной, 18 °, T-1 (3mm), 100 мА, 1.9 В, 10 нс, 10 нс.The VSLY3850 is a 850nm high speed Infrared Emitting Diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and moulded in a clear. It is suitable for high pulse curre..