Brand: ON SEMICONDUCTOR
МОП-транзистор, N Канал, 170 мА, 100 В, 2.98 Ом, 10 В, 1.405 В Новинка.The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS1..
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Brand: ON SEMICONDUCTOR
МОП-транзистор, N Канал, 170 мА, 100 В, 6 Ом, 10 В DC, 0.8 В.The BSS123LT1G is a N-channel Power MOSFET with drain source voltage at 100VDC and drain current at 170mA...
8 ₽
Brand: ON SEMICONDUCTOR
МОП-транзистор, N Канал, 200 мА, 50 В, 3.5 Ом, 5 В, 1.5 В.The BSS138LT1G from On Semiconductor is surface mount, 50V N channel power MOSFET in SOT-23 package. Features low threshold voltage, ideal for low voltage applications. Typical applications include DC-DC converters, power management in portab..
14 ₽
Brand: ON SEMICONDUCTOR
МОП-транзистор, N Канал, 200 мА, 50 В, 5.6 Ом, 2.75 В, 500 мВ.The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space...
9 ₽
Brand: ON SEMICONDUCTOR
МОП-транзистор, N Канал, 210 мА, 50 В, 1.17 Ом, 10 В, 1.3 В Новинка.The BSS138W is a N-channel enhancement-mode FET designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low..
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