Brand: ON SEMICONDUCTOR
ΠΠ½Π²Π΅ΡΡΠΎΡ, 74VHC1G04, 1 Π²Ρ
ΠΎΠ΄, 8ΠΌΠ, 3Π Π΄ΠΎ 5.5Π ΠΏΠΈΡΠ°Π½ΠΈΠ΅, TSOP-5...
12 β½
Brand: ON SEMICONDUCTOR
ΠΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΠΉ ΡΠ»Π΅ΠΌΠ΅Π½Ρ Π, ΡΠ΅ΠΌΠ΅ΠΉΡΡΠ²ΠΎ VHC, 2 Π²Ρ
ΠΎΠ΄Π°, 8ΠΌΠ, 3Π Π΄ΠΎ 5.5Π, SC-70-5.The M74VHC1GT08DFT1G is an advanced high speed CMOS 2-input AND Gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent bipolar schottky TTL while maintaining CMOS low power dissi..
8 β½
Brand: ON SEMICONDUCTOR
ΠΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΠΉ ΡΠ»Π΅ΠΌΠ΅Π½Ρ Π, ΡΠ΅ΠΌΠ΅ΠΉΡΡΠ²ΠΎ VHC, 2 Π²Ρ
ΠΎΠ΄Π°, 8ΠΌΠ, 3Π Π΄ΠΎ 5.5Π, SOT-23-5.The M74VHC1GT08DTT1G is an advanced high speed CMOS 2-input AND Gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent bipolar schottky TTL while maintaining CMOS low power diss..
18 β½
Brand: ON SEMICONDUCTOR
ΠΡΡΠ΅Ρ, Π½Π΅ΠΈΠ½Π²Π΅ΡΡΠΈΡΡΡΡΠΈΠΉ, 3Π Π΄ΠΎ 5.5Π, SOT-353-5.The M74VHC1GT125DF1G is a single gate non-inverting Buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent bipolar Schottky TTL while maintaining CMOS low power dissipation. It requires the 3-state con..
0 β½
Brand: ON SEMICONDUCTOR
ΠΡΡΠ΅Ρ, Π½Π΅ΠΈΠ½Π²Π΅ΡΡΠΈΡΡΡΡΠΈΠΉ, 3Π Π΄ΠΎ 5.5Π, SOT-23-5...
22 β½
Brand: ON SEMICONDUCTOR
ΠΡΡΠ΅Ρ, Π½Π΅ΠΈΠ½Π²Π΅ΡΡΠΈΡΡΡΡΠΈΠΉ, 3Π Π΄ΠΎ 5.5Π, SC-70-5.The M74VHC1GT126DF1G is a single gate non-inverting 3-state Buffer/CMOS Logic Level Shifter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent bipolar Schottky TTL while maintaining CMOS low power dissipati..
0 β½
Brand: ON SEMICONDUCTOR
ΠΡΡΠ΅Ρ, ΡΠ΅ΡΠ²Π΅ΡΠ½ΠΎΠΉ, 3 ΡΠΎΡΡΠΎΡΠ½ΠΈΡ, Π½Π΅ΠΈΠ½Π²Π΅ΡΡΠΈΡΡΡΡΠΈΠΉ, 3Π Π΄ΠΎ 5.5Π, SOT-353-5...
0 β½
Brand: ON SEMICONDUCTOR
ΠΡΡΠ΅Ρ, Π½Π΅ΠΈΠ½Π²Π΅ΡΡΠΈΡΡΡΡΠΈΠΉ, 3Π Π΄ΠΎ 5.5Π, TSOP-5.The M74VHC1GT126DT1G is a single gate non-inverting 3-state Buffer/CMOS Logic Level Shifter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent bipolar Schottky TTL while maintaining CMOS low power dissipatio..
81 β½