ON SEMICONDUCTOR

Биполярный транзистор, дарлингтона, NPN, 120 В, 200 Вт, 30 А, 1000 hFE.The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emit..

Биполярный транзистор, NPN, 60 В, 300 Вт, 50 А, 400 hFE.The MJ11028G is an NPN Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resist..

Биполярный транзистор, дарлингтона, PNP, 120 В, 300 Вт, 50 А, 400 hFE...

Биполярный транзистор, аудио, NPN, 120 В, 6 МГц, 180 Вт, 15 А, 70 hFE.The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC..

Биполярный транзистор, аудио, PNP, 120 В, 18 МГц, 180 Вт, 15 А, 70 hFE.The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such ..