ON SEMICONDUCTOR

Биполярный транзистор, NPN, 80 В, 50 МГц, 1.5 Вт, 3 А, 12 hFE.The MJE182G is a 80V NPN complementary plastic silicon Bipolar Transistor designed for low power audio amplifier and low current, high speed switching applications. The MJE172 (PNP) and MJE182 (NPN) are complementary devices...

Биполярный транзистор, NPN, 40 В, 65 МГц, 15 Вт, 5 А, 10 hFE...

Биполярный транзистор, PNP, -40 В, 65 МГц, 15 Вт, -5 А, 10 hFE...

Биполярный транзистор, аудио, NPN, 100 В, 40 МГц, 15 Вт, 4 А, 40 hFE.The MJE243G is a 100V Silicon NPN Complementary Plastic Power Transistor designed for low power audio amplifier as well as low current and high speed switching applications...

Биполярный транзистор, аудио, PNP, 100 В, 40 МГц, 1.5 Вт, 4 А, 40 hFE.The MJE253G is a -100V Silicon PNP Complementary Plastic Power Transistor designed for low power audio amplifier as well as low current and high speed switching applications...

Массив биполярных транзисторов, Двойной NPN, 100 В, 15 Вт, 2 А, 500 hFE, TO-225...

Биполярный транзистор, NPN, 60 В, 2 МГц, 75 Вт, 10 А, 5 hFE.The MJE3055TG is a 60V NPN complementary plastic silicon Bipolar Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices...

Биполярный транзистор, универсальный, NPN, 300 В, 20 Вт, 500 мА, 240 hFE.The MJE340G is a 300V Silicon NPN Complementary Plastic Medium Power Transistor useful for high voltage general purpose applications. This transistor has thermo pad construction that provides high power dissipation rating for h..