ON SEMICONDUCTOR

Evaluation Board, MicroFJ-60035 SiPM Sensor, 3 x Through Hole Pins, Bias Voltage Новинка.ON Semiconductors Silicon Photomultiplier Sensors (SiPM) provide high gain, excellent PDE, and fast timing along with the the practical advantages associated with s..

Evaluation Board, MicroRB-10035 SiPM Sensor, 3 x Through Hole Pins, Bias Voltage Новинка.ON Semiconductors Silicon Photomultiplier Sensors (SiPM) provide high gain, excellent PDE, and fast timing along with the the practical advantages associated with s..

Биполярный транзистор, PNP, -120 В, 200 Вт, -30 А, 1000 hFE.The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It funct..

Биполярный транзистор, дарлингтона, NPN, 120 В, 200 Вт, 30 А, 1000 hFE.The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emit..

BIPOLAR TRANSISTOR, NPN, 60V TO-204...

Биполярный транзистор, дарлингтона, NPN, 120 В, 300 Вт, 50 А, 18 hFE.The MJ11032G is a NPN Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications...

Биполярный транзистор, PNP, -120 В, 300 Вт, -50 А, 400 hFE.The MJ11033G is a PNP Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resi..

Биполярный транзистор, аудио, NPN, 140 В, 2 МГц, 250 Вт, 20 А, 150 hFE.The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs...