ON SEMICONDUCTOR

Силовой диод быстрого действия, Одиночный, 600 В, 3 А, 1.28 В, 75 нс, 75 А.The MURS360T3G is a surface-mount ultrafast Power Rectifier with epoxy moulded case and all external surfaces corrosion-resistant and terminal leads are readily solderable finish. The ultrafast rectifier employs state of the ..

Силовой диод быстрого действия, Одиночный, 600 В, 4 А, 1.28 В, 75 нс, 100 А...

МОП-транзистор, N Канал, 750 мА, 20 В, 0.075 Ом, 10 В, 1.7 В...

МОП-транзистор, N Канал, 2.1 А, 30 В, 0.08 Ом, 10 В, 1.7 В...

SRAM, 1 Мбит, 128К x 8бит, 1.7В до 2.2В, TSSOP, 8 вывод(-ов).The N01S818HAT22I is a 1MB ultra low power serial SRAM in 8 pin TSSOP package. This serial SRAM includes several integrated memory devices including 1MB serially accessed static random access memory and internally organized as 128Kwords by..

SRAM, 1 МБ, 128К x 8бит, 2.5В до 5.5В, TSSOP, 8 вывод(-ов).The N01S830BAT22I is a 1Mb ultra-low power serial SRAM in 8 pin TSSOP package. The serial SRAM family includes several integrated memory devices including this 1 Mb serially accessed static random access memory, internally organized as 128K ..

SRAM, 1 МБ, 128К x 8бит, 2.5В до 5.5В, TSSOP, 8 вывод(-ов).The N01S830HAT22I is a 1Mb ultra-low power serial SRAM in 8 pin TSSOP package. The serial SRAM family includes several integrated memory devices including this 1Mb serially accessed static random access memory, internally organized as 128K w..

EEPROM, Serial I2C (2-Wire), 2 Кбит, 256 x 8бит, 1 МГц, US8, 8 вывод(-ов)...

EEPROM, Serial I2C (2-Wire), 2 Кбит, 256 x 8бит, 1 МГц, US8, 8 вывод(-ов)...