ON SEMICONDUCTOR

Отражающий фотопрерыватель, фототранзистор, THT, 1.27мм, 50мА, 5В обратное, 1.7В прямое.The QRD1114 is a Reflective Object Sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on..

Отражающий фотопрерыватель, миниатюрный, фототранзистор, THT, 5мм, 50мА, 5В обратное, 1.2В прямое.The QRE1113 is a Miniature Reflective Object Sensor with photo transistor output. No contact surface sensing. Gull wing lead form. Through-hole 2lead form.-40 to 85°C Operating temperature..

Photo Diode, 60° Half Sensitivity, 30nA Dark Current, 940nm, PLCC-2...

Photo Diode, 60° Half Sensitivity, 30nA Dark Current, 940nm, PLCC-2...

Фототранзистор, 940 нм, 24 °, 75 мВт, 2 вывод(-ов), T-3/4 (1.8mm)...

Фототранзистор, 880 нм, 50 °, 100 мВт, 2 вывод(-ов).The QSE114 is a Plastic Silicon Infrared Phototransistor encapsulated in a wide angle, infrared transparent and black plastic side-looking package. This product is general usage and suitable for many different applications.NPN silicon phototransist..

PHOTO SENSOR, 880NM, INVERTER O/P.The QSE159 is a Plastic Silicon Photosensor features a Schmitt trigger at output which provides hysteresis for noise immunity and pulse shaping. The TTL/LSTTL compatible output can drive up to ten TTL loads over supply currents from 4.5 to 16V. The device is marked ..

Диод Шоттки малого сигнала, Одиночный, 30 В, 200 мА, 600 мВ, 200 мА, 150 °C...