STMICROELECTRONICS

Биполярный транзистор, NPN, 300 В, 15 Вт, 500 мА, 30 hFE...

Биполярный транзистор, PNP, 300 В, 15 Вт, -500 мА, 30 hFE...

Биполярный транзистор, NPN, 80 В, 20 Вт, 8 А, 60 hFE...

Биполярный транзистор, PNP, -80 В, 20 Вт, -8 А, 40 hFE...

BIPOLAR TRANSISTOR, NPN, 250V, TO-252...

Биполярный транзистор, PNP, 80 В, 50 МГц, 12.5 Вт, 3 А, 50 hFE...

Биполярный транзистор, NPN, 80 В, 50 МГц, 12.5 Вт, 3 А, 50 hFE...

Биполярный транзистор, PNP, 60 В, 2 МГц, 75 Вт, 10 А, 20 hFE.The MJE2955T is a -60V Silicon Epitaxial Base PNP Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction los..

Биполярный транзистор, NPN, 60 В, 2 МГц, 75 Вт, 3 А, 400 hFE...

Биполярный транзистор, NPN, 300 В, 20.8 Вт, 500 мА, 240 hFE.The MJE340 is a 300V Silicon Planar NPN Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction lo..

Биполярный транзистор, PNP, -300 В, 20.8 Вт, -500 мА, 240 hFE.The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction..