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STMICROELECTRONICS

Биполярный транзистор, NPN, 40 Π’, 40 Π’Ρ‚, 4 А, 40 hFE...
0 β‚½
Биполярный транзистор, NPN, 80 Π’, 40 Π’Ρ‚, 4 А, 750 hFE...
0 β‚½
Биполярный транзистор, ΡƒΠ½ΠΈΠ²Π΅Ρ€ΡΠ°Π»ΡŒΠ½Ρ‹ΠΉ, NPN, 300 Π’, 50 ΠœΠ“Ρ†, 350 ΠΌΠ’Ρ‚, 500 мА, 40 hFE.The MMBTA42 is a small signal NPN Transistor for surface mounting circuits. The device is manufactured in Epitaxial planar technology...
4 β‚½
Биполярный транзистор, PNP, -300 Π’, 50 ΠœΠ“Ρ†, 350 ΠΌΠ’Ρ‚, -500 мА, 40 hFE.The MMBTA92 is a small signal PNP Transistor built in epitaxial planar technology. Designed for use in video amplifier circuits and telephone wire line interface...
4 β‚½
Π—Π°Ρ‰ΠΈΡ‚Π½ΠΎΠ΅ устройство ΠΎΡ‚ Π­Π‘Π , массив, SOT-323, 5 Π²Ρ‹Π²ΠΎΠ΄(-ΠΎΠ²), 6.1 Π’, 25 Π’Ρ‚...
0 β‚½
МЭМБ ΠΌΠΈΠΊΡ€ΠΎΡ„ΠΎΠ½, Π΄ΠΈΡ„Ρ„Π΅Ρ€Π΅Π½Ρ†ΠΈΠ°Π»ΡŒΠ½Ρ‹ΠΉ Π°Π½Π°Π»ΠΎΠ³ΠΎΠ²Ρ‹ΠΉ, 2.7Π’ Π΄ΠΎ 3.6Π’ ΠΏΠΈΡ‚Π°Π½ΠΈΠ΅, RHLGA-4...
0 β‚½
Устройство Ρ€Π΅Π³ΡƒΠ»ΠΈΡ€ΠΎΠ²ΠΊΠΈ Π·Π²ΡƒΠΊΠ°, МЭМБ ΠœΠΈΠΊΡ€ΠΎΡ„ΠΎΠ½, 1.6Π’ Π΄ΠΎ 3.6Π’, RHLGA, 3 Π²Ρ‹Π²ΠΎΠ΄(-ΠΎΠ²), -40 Β°C.The MP23AB02BTR is a MEMS audio sensor high-performance analogue Bottom-port Microphone with a low-profile sensing element. The sensing element capable of detecting acoustic waves, is manufactured using a speciali..
0 β‚½
Устройство Ρ€Π΅Π³ΡƒΠ»ΠΈΡ€ΠΎΠ²ΠΊΠΈ Π·Π²ΡƒΠΊΠ°, ΠΌΠ½ΠΎΠ³ΠΎΠ½Π°ΠΏΡ€Π°Π²Π»Π΅Π½Π½Ρ‹ΠΉ, МЭМБ ΠœΠΈΠΊΡ€ΠΎΡ„ΠΎΠ½, 1.64Π’ Π΄ΠΎ 3.6Π’, RHLGA, 4 Π²Ρ‹Π²ΠΎΠ΄(-ΠΎΠ²)...
0 β‚½
MEMS MICROPHONE, HCLGA-4.The MP34DT01-M is an omnidirectional Digital MEMS Microphone built with a capacitive sensing element and an IC interface. The sensing element, capable of detecting acoustic waves, is manufactured using a specialized silicon micromachining process dedicated to produce audio s..
0 β‚½
Устройство Ρ€Π΅Π³ΡƒΠ»ΠΈΡ€ΠΎΠ²ΠΊΠΈ Π·Π²ΡƒΠΊΠ°, всСнаправлСнный, МЭМБ ΠœΠΈΠΊΡ€ΠΎΡ„ΠΎΠ½, 1.64Π’ Π΄ΠΎ 3.6Π’, HCLGA, 4 Π²Ρ‹Π²ΠΎΠ΄(-ΠΎΠ²)...
0 β‚½
Устройство Ρ€Π΅Π³ΡƒΠ»ΠΈΡ€ΠΎΠ²ΠΊΠΈ Π·Π²ΡƒΠΊΠ°, МЭМБ ΠœΠΈΠΊΡ€ΠΎΡ„ΠΎΠ½, 1.64Π’ Π΄ΠΎ 3.6Π’, HCLGA, 4 Π²Ρ‹Π²ΠΎΠ΄(-ΠΎΠ²), -40 Β°C.The MP34DT01TR-M is a MEMS audio sensor omnidirectional Digital Microphone built with a capacitive sensing element and an IC interface. The sensing element, capable of detecting acoustic waves, is manufactured us..
0 β‚½
Устройство Ρ€Π΅Π³ΡƒΠ»ΠΈΡ€ΠΎΠ²ΠΊΠΈ Π·Π²ΡƒΠΊΠ°, МЭМБ ΠœΠΈΠΊΡ€ΠΎΡ„ΠΎΠ½, 1.64Π’ Π΄ΠΎ 3.6Π’, HCLGA, 4 Π²Ρ‹Π²ΠΎΠ΄(-ΠΎΠ²), -40 Β°C...
0 β‚½
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