Brand: STMICROELECTRONICS
Артикул: BD912
Биполярный транзистор, универсальный, PNP, 100 В, 3 МГц, 90 Вт, 15 А, 40 hFE.The BD912 is a silicon epitaxial base NPN Power Transistor. Designed for use in power linear and switching applications...
0 ₽
Brand: STMICROELECTRONICS
Артикул: BDW83C
Биполярный транзистор, дарлингтона, NPN, 100 В, 130 Вт, 15 А, 750 hFE...
0 ₽
Brand: STMICROELECTRONICS
Артикул: BDW93C
Биполярный транзистор, дарлингтона, NPN, 100 В, 80 Вт, 12 А, 20000 hFE.The BDW93C is a 100V Silicon Epitaxial Base NPN Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resu..
154 ₽
Brand: STMICROELECTRONICS
Артикул: BDW93CFP
Биполярный транзистор, дарлингтона, NPN, 100 В, 33 Вт, 12 А, 1000 hFE...
0 ₽
Brand: STMICROELECTRONICS
Артикул: BDW94C
Биполярный транзистор, дарлингтона, PNP, 100 В, 80 Вт, 12 А, 1000 hFE.The BDW94C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resu..
42 ₽
Brand: STMICROELECTRONICS
Артикул: BDW94CFP
Биполярный транзистор, дарлингтона, PNP, 100 В, 33 Вт, -12 А, 1000 hFE...
0 ₽
Brand: STMICROELECTRONICS
Артикул: BDX33C
Биполярный транзистор, дарлингтона, NPN, 100 В, 70 Вт, 10 А, 750 hFE.The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications...
60 ₽
Brand: STMICROELECTRONICS
Артикул: BDX34C
Биполярный транзистор, дарлингтона, PNP, 100 В, 70 Вт, 10 А, 750 hFE.The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resul..
0 ₽
Brand: STMICROELECTRONICS
Артикул: BDX53B
Биполярный транзистор, дарлингтона, NPN, 80 В, 60 Вт, 8 А, 750 hFE...
55 ₽
Brand: STMICROELECTRONICS
Артикул: BDX53BFP
Биполярный транзистор, дарлингтона, NPN, 80 В, 29 Вт, 8 А, 750 hFE...
0 ₽
Brand: STMICROELECTRONICS
Артикул: BDX53C
Биполярный транзистор, дарлингтона, NPN, 100 В, 60 Вт, 8 А, 750 hFE.The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor fe..
48 ₽
Brand: STMICROELECTRONICS
Артикул: BDX54B
Биполярный транзистор, дарлингтона, PNP, 80 В, 60 Вт, 8 А, 750 hFE...
0 ₽