STMICROELECTRONICS

Биполярный транзистор, дарлингтона, NPN, 60 В, 40 Вт, 4 А, 750 hFE.The BD677 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collec..

Биполярный транзистор, NPN, 60 В, 40 Вт, 4 А, 750 hFE.The BD677A is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter ..

Биполярный транзистор, дарлингтона, PNP, 60 В, 40 Вт, 4 А, 750 hFE...

Биполярный транзистор, дарлингтона, NPN, 60 В, 40 Вт, 4 А, 750 hFE.The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collec..

Биполярный транзистор, NPN, 80 В, 40 Вт, 4 А, 750 hFE...

Биполярный транзистор, дарлингтона, PNP, 60 В, 40 Вт, 4 А, 750 hFE...

Биполярный транзистор, универсальный, NPN, 100 В, 3 МГц, 90 Вт, 15 А, 50 hFE.The BD911 from STMicroelectronics is a through hole NPN complementary power transistors in TO-220 package. This device manufactured in epitaxial planar technology...