STMICROELECTRONICS

Биполярный транзистор, универсальный, PNP, 100 В, 3 МГц, 90 Вт, 15 А, 40 hFE.The BD912 is a silicon epitaxial base NPN Power Transistor. Designed for use in power linear and switching applications...

Биполярный транзистор, дарлингтона, NPN, 100 В, 80 Вт, 12 А, 20000 hFE.The BDW93C is a 100V Silicon Epitaxial Base NPN Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resu..

Биполярный транзистор, дарлингтона, NPN, 100 В, 33 Вт, 12 А, 1000 hFE...

Биполярный транзистор, дарлингтона, PNP, 100 В, 80 Вт, 12 А, 1000 hFE.The BDW94C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resu..

Биполярный транзистор, дарлингтона, PNP, 100 В, 33 Вт, -12 А, 1000 hFE...

Биполярный транзистор, дарлингтона, NPN, 100 В, 70 Вт, 10 А, 750 hFE.The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications...

Биполярный транзистор, дарлингтона, NPN, 80 В, 60 Вт, 8 А, 750 hFE...

Биполярный транзистор, дарлингтона, NPN, 100 В, 60 Вт, 8 А, 750 hFE.The BDX53C from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar base island technology with monolithic darlington configuration. This transistor fe..