STMICROELECTRONICS

БТИЗ транзистор, 10 А, 1.2 кВ, 75 Вт, 1.2 кВ, TO-252, 3 вывод(-ов).The STGD5NB120SZT4 is a 1200V Low Drop Internally Clamped IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for u..

БТИЗ транзистор, 90 А, 2.5 В, 260 Вт, 600 В, ISOTOP, 4 вывод(-ов)...

БТИЗ транзистор, 100 А, 2.5 В, 260 Вт, 600 В, ISOTOP, 4 вывод(-ов)...

БТИЗ транзистор, 9 А, 2.5 В, 25 Вт, 600 В, TO-220FP, 3 вывод(-ов)...