STMICROELECTRONICS

БТИЗ транзистор, 60 А, 2.1 В, 200 Вт, 600 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 60 А, 2.5 В, 200 Вт, 600 В, TO-247, 3 вывод(-ов).The STGW30NC60WD is a 600V Ultra Fast IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in HF, SMPS and PF..

БТИЗ транзистор, 60 А, 1.85 В, 258 Вт, 600 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 70 А, 1.7 В, 200 Вт, 600 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 63 А, 1.3 кВ, 250 Вт, 1.3 кВ, TO-247, 3 вывод(-ов).The STGW38IH130D is a 1300V Very Fast IGBT that developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited f..

БТИЗ транзистор, 80 А, 2.5 В, 250 Вт, 600 В, TO-247, 3 вывод(-ов).The STGW39NC60VD is a 600V Very Fast IGBT that utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited for UPS, high frequenc..

БТИЗ транзистор, 80 А, 2.1 В, 468 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 80 А, 1.6 В, 283 Вт, 650 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 80 А, 1.6 В, 283 Вт, 650 В, TO-247, 4 вывод(-ов)...

БТИЗ транзистор, 80 А, 1.85 В, 468 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)...