STMICROELECTRONICS

Силовой МОП-транзистор, N Канал, 5.2 А, 800 В, 1.8 Ом, 10 В, 3.75 В...

Силовой МОП-транзистор, N Канал, 5.2 А, 800 В, 1.5 Ом, 10 В, 3.75 В.The STP7NK80ZFP is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistanc..

Силовой МОП-транзистор, N Канал, 5 А, 600 В, 0.84 Ом, 10 В, 3 В...

МОП-транзистор, N Канал, 80 А, 100 В, 0.0085 Ом, 10 В, 3.5 В...

МОП-транзистор, N Канал, 80 А, 30 В, 0.004 Ом, 10 В, 1 В.The STP80NF03L-04 is a 30V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche..

МОП-транзистор, N Канал, 40 А, 60 В, 6.5 мОм, 10 В, 3 В.The STP80NF06 is a 60V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche char..

МОП-транзистор, N Канал, 80 А, 100 В, 0.012 Ом, 10 В, 3 В.The STP80NF10 is a 100V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced h..

МОП-транзистор, N Канал, 40 А, 100 В, 12 мОм, 10 В, 3 В...

МОП-транзистор, N Канал, 80 А, 120 В, 13 мОм, 10 В, 2 В...

МОП-транзистор, N Канал, 80 А, 55 В, 6.5 мОм, 10 В, 3 В.The STP80NF55-06 is a 55V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche c..