STMICROELECTRONICS

Биполярный транзистор, дарлингтона, NPN, 100 В, 2 Вт, 8 А, 15000 hFE...

Биполярный транзистор, дарлингтона, PNP, 100 В, 2 Вт, 8 А, 1000 hFE...

Биполярный транзистор, NPN, 100 В, 125 Вт, 10 А, 1000 hFE.The TIP142 is a NPN complementary Power Darlington Transistor. This device is manufactured in planar technology with base island layout and monolithic Darlington configuration. Exceptional high gain performance coupled with very low saturatio..

Биполярный транзистор, Дарлингтона, PNP, -100 В, 125 Вт, -10 А, 500 hFE.The TIP147 is a complementary PNP Power Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance c..

Биполярный транзистор, дарлингтона, PNP, 100 В, 90 Вт, 15 А, 1000 hFE...

Биполярный транзистор, NPN, 100 В, 30 Вт, 1 А, 75 hFE.The TIP29C is a 100V NPN Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation vol..

Биполярный транзистор, NPN, 70 В, 90 Вт, 15 А, 70 hFE.The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications...

Биполярный транзистор, NPN, 60 В, 40 Вт, 3 А, 50 hFE.The TIP31A is a 60V NPN Power Transistor manufactured in base island technology with better performance. The transistor is suitable for audio, power linear and switching applications. Fast switching times and very low saturation voltage resulting ..

Биполярный транзистор, PNP, 60 В, 2 Вт, 3 А, 25 hFE...