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STMICROELECTRONICS

Биполярный транзистор, PNP, 70 Π’, 90 Π’Ρ‚, 15 А, 20 hFE...
52 β‚½
Биполярный транзистор, NPN, 60 Π’, 2 Π’Ρ‚, 1 А, 75 hFE...
75 β‚½
Биполярный транзистор, NPN, 100 Π’, 30 Π’Ρ‚, 1 А, 75 hFE.The TIP29C is a 100V NPN Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation vol..
0 β‚½
Биполярный транзистор, NPN, 70 Π’, 90 Π’Ρ‚, 15 А, 70 hFE.The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications...
0 β‚½
Биполярный транзистор, NPN, 60 Π’, 40 Π’Ρ‚, 3 А, 50 hFE.The TIP31A is a 60V NPN Power Transistor manufactured in base island technology with better performance. The transistor is suitable for audio, power linear and switching applications. Fast switching times and very low saturation voltage resulting ..
0 β‚½
Биполярный транзистор, NPN, 100 Π’, 40 Π’Ρ‚, 3 А, 50 hFE.The TIP31C is a base island technology NPN Power Transistor for audio, power linear and switching applications...
40 β‚½
Биполярный транзистор, PNP, 60 Π’, 2 Π’Ρ‚, 3 А, 25 hFE...
146 β‚½
Биполярный транзистор, PNP, -100 Π’, 40 Π’Ρ‚, -3 А, 50 hFE.The TIP32C is a -100V Silicon Epitaxial Base PNP Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses...
36 β‚½
Биполярный транзистор, NPN, 100 Π’, 3 ΠœΠ“Ρ†, 80 Π’Ρ‚, 10 А, 100 hFE...
532 β‚½
Биполярный транзистор, PNP, -100 Π’, 3 ΠœΠ“Ρ†, 80 Π’Ρ‚, -10 А, 100 hFE...
393 β‚½
Биполярный транзистор, NPN, 100 Π’, 3 ΠœΠ“Ρ†, 125 Π’Ρ‚, 25 А, 50 hFE.The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with "base island" layout resulting in exceptional high gain performance coupled with ve..
196 β‚½
Массив биполярных транзисторов, NPN, 100 Π’, 125 Π’Ρ‚, 25 А, 10 hFE, TO-3P...
312 β‚½
Показано с 7921 ΠΏΠΎ 7932 ΠΈΠ· 8949 (всСго 746 страниц)