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STMICROELECTRONICS

ШИМ ΠΊΠΎΠ½Ρ‚Ρ€ΠΎΠ»Π»Π΅Ρ€, Ρ‚ΠΎΠΊΠΎΠ²Ρ‹ΠΉ Ρ€Π΅ΠΆΠΈΠΌ, 12Π’-25Π’ ΠΏΠΈΡ‚Π°Π½ΠΈΠ΅, 250ΠΊΠ“Ρ†, 13.5Π’/200мА Π²Ρ‹Ρ…ΠΎΠ΄, DIP-8...
64 β‚½
ШИМ ΠΊΠΎΠ½Ρ‚Ρ€ΠΎΠ»Π»Π΅Ρ€ Ρ‚ΠΎΠΊΠΎΠ²ΠΎΠ³ΠΎ Ρ€Π΅ΠΆΠΈΠΌΠ°, 11Π’ Π΄ΠΎ 30Π’ ΠΏΠΈΡ‚Π°Π½ΠΈΠ΅, 500ΠΊΠ“Ρ†, 1А Π²Ρ‹Ρ…ΠΎΠ΄, SOIC-8...
95 β‚½
ШИМ ΠΊΠΎΠ½Ρ‚Ρ€ΠΎΠ»Π»Π΅Ρ€, 25Π’-12Π’ ΠΏΠΈΡ‚Π°Π½ΠΈΠ΅, 250ΠΊΠ“Ρ†, 5Π’/200мА Π²Ρ‹Ρ…ΠΎΠ΄, DIP-8.The UC3845BN is a high performance current mode PWM Controller IC. It is provides the necessary features to implement off-line or DC-to-DC fixed frequency current mode control schemes with a minimal external parts count. Internally imple..
63 β‚½
Массив биполярных транзисторов, Π΄Π°Ρ€Π»ΠΈΠ½Π³Ρ‚ΠΎΠ½Π°, NPN, 50 Π’, 500 мА, 1000 hFE, DIP...
44 β‚½
Массив биполярных транзисторов, Π΄Π°Ρ€Π»ΠΈΠ½Π³Ρ‚ΠΎΠ½Π°, Π”Π²ΠΎΠΉΠ½ΠΎΠΉ NPN, 50 Π’, 500 мА, 1000 hFE, SOIC...
38 β‚½
Массив биполярных транзисторов, Π”Π²ΠΎΠΉΠ½ΠΎΠΉ NPN, 50 Π’, 500 мА, 1000 hFE, SOIC...
47 β‚½
Массив биполярных транзисторов, Π΄Π°Ρ€Π»ΠΈΠ½Π³Ρ‚ΠΎΠ½Π°, NPN, 50 Π’, 500 мА, 1000 hFE, DIP.The ULN2002A is an NPN Darlington Array containing seven open collector Darlington pairs with common emitters. Each channel rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for induc..
49 β‚½
Массив биполярных транзисторов, Π΄Π°Ρ€Π»ΠΈΠ½Π³Ρ‚ΠΎΠ½Π°, Π”Π²ΠΎΠΉΠ½ΠΎΠΉ NPN, 50 Π’, 500 мА, 1000 hFE, SOIC...
37 β‚½
Массив биполярных транзисторов, Π΄Π°Ρ€Π»ΠΈΠ½Π³Ρ‚ΠΎΠ½Π°, NPN, 50 Π’, 500 мА, 1000 hFE, DIP.The ULN2003A from STMicroelectronics is a high voltage, high current seven darlington transistor array. Array contains seven open collector and darlington pairs with common emitters. Each channel rated at 500mA and can wit..
44 β‚½
Массив биполярных транзисторов, Π΄Π°Ρ€Π»ΠΈΠ½Π³Ρ‚ΠΎΠ½Π°, NPN, 50 Π’, 500 мА, 1000 hFE, SOIC.The ULN2003D1013TR is a high voltage/current Darlington Transistor Array, each containing seven open collector Darlington pairs with common emitters. Each channel rated at 500mA and can withstand peak currents of 600mA. S..
44 β‚½
Массив биполярных транзисторов, Π΄Π°Ρ€Π»ΠΈΠ½Π³Ρ‚ΠΎΠ½Π°, NPN, 50 Π’, 500 мА, 1000 hFE, SOIC...
18 β‚½
Массив биполярных транзисторов, Π΄Π°Ρ€Π»ΠΈΠ½Π³Ρ‚ΠΎΠ½Π°, NPN, 50 Π’, 500 мА, 1000 hFE, DIP...
42 β‚½
Показано с 8545 ΠΏΠΎ 8556 ΠΈΠ· 8949 (всСго 746 страниц)