Диоды Шоттки

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 50 А, 252 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 50 А, 147 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 6 А, 22 нКл, QFN Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery ..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 12 А, 40 нКл, QFN Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 9.2 А, 37 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 6 А, 22 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching character..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 8 А, 27 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching character..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 34 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 12 А, 40 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 16 А, 52 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 20 А, 64 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 100 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..