Биполярные Одиночные Массивы Транзисторов - BJT

Биполярный транзистор, PNP, -30 В, 200 МГц, 625 мВт, -1 А, 30000 hFE Новинка.The BC516_D27Z is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A.-55 to 150°C Operating junction temperature rang..

Биполярный транзистор, NPN, 65 В, 300 МГц, 625 мВт, 100 мА, 420 hFE...

Биполярный транзистор, NPN, 30 В, 300 МГц, 500 мВт, 100 мА, 420 hFE Новинка.The BC548CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications.Complement to BC558..

Биполярный транзистор, NPN, 45 В, 300 МГц, 500 мВт, 100 мА, 420 hFE Новинка.The BC550CTA is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications.Low noise Complement to BC560..

Биполярный транзистор, PNP, -65 В, 150 МГц, 500 мВт, -100 мА, 200 hFE Новинка.The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications.High voltage VCEO Complement to BC546..

Биполярный транзистор, PNP, 60 В, 100 МГц, 1 Вт, 1 А, 40 hFE...

Биполярный транзистор, NPN, 80 В, 100 МГц, 830 мВт, 1 А, 25 hFE Новинка.The BC63916_D27Z is a NPN Epitaxial Silicon Transistor designed for use in switching and amplifier applications.-55 to 150°C Operating junction temperature range..

Биполярный транзистор, PNP, -45 В, 100 МГц, 460 мВт, -500 мА, 250 hFE...