Brand: STMICROELECTRONICS
Артикул: BD910
Биполярный транзистор, PNP, 80 В, 3 МГц, 90 Вт, -10 А, 40 hFE...
0 ₽
Brand: STMICROELECTRONICS
Артикул: BD911
Биполярный транзистор, универсальный, NPN, 100 В, 3 МГц, 90 Вт, 15 А, 50 hFE.The BD911 from STMicroelectronics is a through hole NPN complementary power transistors in TO-220 package. This device manufactured in epitaxial planar technology...
86 ₽
Brand: STMICROELECTRONICS
Артикул: BD912
Биполярный транзистор, универсальный, PNP, 100 В, 3 МГц, 90 Вт, 15 А, 40 hFE.The BD912 is a silicon epitaxial base NPN Power Transistor. Designed for use in power linear and switching applications...
0 ₽
Brand: ON SEMICONDUCTOR
Артикул: BDV64BG
Биполярный транзистор, дарлингтона, PNP, -100 В, 125 Вт, -10 А, 1000 hFE.The BDV64BG is a -100V Silicon PNP Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in..
398 ₽
Brand: ON SEMICONDUCTOR
Артикул: BDV65BG
Биполярный транзистор, дарлингтона, NPN, 100 В, 125 Вт, 10 А, 1000 hFE.The BDV65BG is a 100V Silicon NPN Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in ba..
0 ₽
Brand: ON SEMICONDUCTOR
Артикул: BDW42G
Биполярный транзистор, дарлингтона, NPN, 100 В, 4 МГц, 85 Вт, 15 А, 1000 hFE.The BDW42G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose and low speed switching applications. The transistor has monolithic construction with built-in base-emitter shu..
0 ₽
Brand: ON SEMICONDUCTOR
Артикул: BDW46G
Биполярный транзистор, дарлингтона, PNP, 80 В, 4 МГц, 85 Вт, 15 А, 1000 hFE...
0 ₽
Brand: ON SEMICONDUCTOR
Артикул: BDW47G
Биполярный транзистор, дарлингтона, PNP, 100 В, 4 МГц, 85 Вт, 15 А, 1000 hFE...
0 ₽
Brand: STMICROELECTRONICS
Артикул: BDW83C
Биполярный транзистор, дарлингтона, NPN, 100 В, 130 Вт, 15 А, 750 hFE...
0 ₽
Brand: STMICROELECTRONICS
Артикул: BDW93C
Биполярный транзистор, дарлингтона, NPN, 100 В, 80 Вт, 12 А, 20000 hFE.The BDW93C is a 100V Silicon Epitaxial Base NPN Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resu..
167 ₽
Brand: STMICROELECTRONICS
Артикул: BDW93CFP
Биполярный транзистор, дарлингтона, NPN, 100 В, 33 Вт, 12 А, 1000 hFE...
0 ₽
Brand: STMICROELECTRONICS
Артикул: BDW94C
Биполярный транзистор, дарлингтона, PNP, 100 В, 80 Вт, 12 А, 1000 hFE.The BDW94C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resu..
45 ₽