Транзисторы - Биполярные Одиночные

Биполярный транзистор, универсальный, NPN, 100 В, 3 МГц, 90 Вт, 15 А, 50 hFE.The BD911 from STMicroelectronics is a through hole NPN complementary power transistors in TO-220 package. This device manufactured in epitaxial planar technology...

Биполярный транзистор, универсальный, PNP, 100 В, 3 МГц, 90 Вт, 15 А, 40 hFE.The BD912 is a silicon epitaxial base NPN Power Transistor. Designed for use in power linear and switching applications...

Биполярный транзистор, дарлингтона, PNP, -100 В, 125 Вт, -10 А, 1000 hFE.The BDV64BG is a -100V Silicon PNP Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in..

Биполярный транзистор, дарлингтона, NPN, 100 В, 125 Вт, 10 А, 1000 hFE.The BDV65BG is a 100V Silicon NPN Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in ba..

Биполярный транзистор, дарлингтона, PNP, 100 В, 4 МГц, 85 Вт, 15 А, 1000 hFE...

Биполярный транзистор, дарлингтона, NPN, 100 В, 80 Вт, 12 А, 20000 hFE.The BDW93C is a 100V Silicon Epitaxial Base NPN Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resu..

Биполярный транзистор, дарлингтона, NPN, 100 В, 33 Вт, 12 А, 1000 hFE...

Биполярный транзистор, дарлингтона, PNP, 100 В, 80 Вт, 12 А, 1000 hFE.The BDW94C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resu..

Биполярный транзистор, дарлингтона, PNP, 100 В, 33 Вт, -12 А, 1000 hFE...