Биполярные транзисторы

Биполярный транзистор, PNP, -300 В, 20.8 Вт, -500 мА, 240 hFE.The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction..

Биполярный транзистор, универсальный, PNP, 300 В, 20 Вт, 500 мА, 240 hFE...

Биполярный транзистор, PNP, 40 В, 40 Вт, 4 А, 40 hFE...

Биполярный транзистор, NPN, 160 В, 1 МГц, 125 Вт, 16 А, 35 hFE...

BIPOLAR TRANSISTOR, PNP, -300V, TO-220...

Биполярный транзистор, PNP, 375 В, 10 МГц, 2 Вт, 1 А, 10 hFE...

Биполярный транзистор, PNP, -350 В, 10 МГц, 40 Вт, -1 А, 10 hFE...

Биполярный транзистор, PNP, 400 В, 80 Вт, 8 А, 15 hFE.The MJE5852G is a -400V PNP silicon Bipolar Power Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical. This switch-mode series transistor is particularly suited for line operated ..