МОП-транзисторы

Двойной МОП-транзистор, Двойной N Канал, 3.5 А, 20 В, 0.0417 Ом, 4.5 В, 1.5 В...

МОП-транзистор, P Канал, -5.1 А, -20 В, 0.025 Ом, -4.5 В, -1 В...

МОП-транзистор, P Канал, 2 А, -20 В, 0.065 Ом, -4.5 В, -950 мВ.The NTGS3443T1G is a P-channel Power MOSFET offers -20V drain source voltage and -2.2A continuous drain current. It is suitable for power management in portable and battery-powered products, cellular and cordless telephones and PCMCIA ca..

МОП-транзистор, N Канал, 75 А, 650 В, 0.023 Ом, 10 В, 5 В.ON Semiconductor's 650V SuperFET III series provides the highest performance Super Junction MOSFETs specifically designed for highest power density...

Двойной МОП-транзистор, N и P Дополнение, -3.9 А, -20 В, 0.064 Ом, -4.5 В, -1.5 В.The NTHD3100CT1G is a N/P-channel Complementary MOSFET ideal for portable battery powered products. The device is designed for DC-to DC conversion circuits, load switch applications requiring level shift and drive smal..

МОП-транзистор, N Канал, 65 А, 650 В, 0.032 Ом, 10 В, 5 В...

МОП-транзистор, N Канал, 46 А, 650 В, 0.054 Ом, 10 В, 5 В...

МОП-транзистор, SuperFET®, N Канал, 40 А, 650 В, 0.07 Ом, 10 В, 5 В...

Двойной МОП-транзистор, N и P Канал, 630 мА, 20 В, 0.29 Ом, 4.5 В, 1.5 В...

МОП-транзистор, P Канал, -2.7 А, -12 В, 0.045 Ом, -4.5 В, -1.2 В...