Brand: ON SEMICONDUCTOR
МОП-транзистор, N Канал, 170 мА, 100 В, 2.98 Ом, 10 В, 1.405 В Новинка.The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS1..
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Brand: ON SEMICONDUCTOR
МОП-транзистор, N Канал, 210 мА, 50 В, 1.17 Ом, 10 В, 1.3 В Новинка.The BSS138W is a N-channel enhancement-mode FET designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low..
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