Полупроводники - Дискретные

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 34 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 12 А, 40 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 16 А, 52 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 20 А, 64 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 100 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 34 нКл, TO-220FP.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 20 А, 64 нКл, TO-220FP.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..

БТИЗ транзистор, траншейного типа, 60 А, 1.6 В, 238 Вт, 650 В, TO-3PN, 3 вывод(-ов)...

БТИЗ транзистор, 120 А, 1.9 В, 600 Вт, 650 В, TO-3PN, 3 вывод(-ов)...

БТИЗ транзистор, 80 А, 1.6 В, 94 Вт, 650 В, TO-3PF, 3 вывод(-ов) Новинка...