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Полупроводники - Дискретные

Brand: VISHAY
N CHANNEL MOSFET, 50V, 1.7A, DIP...
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 1.7 А, 60 В, 200 мОм, 10 В, 4 В.The IRFD014PBF is a 60V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case s..
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 2.4 А, 50 В, 100 мОм, 10 В, 4 В...
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 2.5 А, 60 В, 100 мОм, 10 В, 4 В.The IRFD024PBF is a 60V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case s..
93 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 1 А, 100 В, 540 мОм, 10 В, 4 В.The IRFD110PBF is a N-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness...
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 1.3 А, 100 В, 270 мОм, 10 В, 4 В.The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case..
0 ₽
Brand: VISHAY
N CHANNEL MOSFET, 100V, 1.3A...
96 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 600 мА, 200 В, 1.5 Ом, 10 В, 4 В...
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 1.3 А, 200 В, 800 мОм, 10 В, 4 В...
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 350 мА, 400 В, 3.6 Ом, 10 В, 4 В...
114 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 370 мА, 500 В, 3 Ом, 10 В, 4 В...
95 ₽
Brand: VISHAY
P CHANNEL MOSFET, -50V, 1.1A, HD-1...
112 ₽
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