Полупроводники - Дискретные

Биполярный транзистор, PNP, -60 В, 2.5 МГц, 115 Вт, -15 А, 5 hFE.The MJ2955G is a -60V Silicon PNP Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications...

Биполярный транзистор, NPN, 90 В, 2 МГц, 200 Вт, 30 А, 100 hFE...

Биполярный транзистор, AEC-Q100, NPN, 90 В, 2 МГц, 200 Вт, 30 А, 25 hFE.The MJ802G is a 90V Silicon NPN Bipolar High Power Transistor for use as an output device in complementary audio amplifiers to 100W music power per channel...

POWER TRANSISTOR, NPN, 100V, D2-PAK...

Массив биполярных транзисторов, AEC-Q100, NPN, 100 В, 65 Вт, 6 А, 15 hFE, TO-263...

POWER TRANSISTOR, PNP, -100V D2-PAK...

Биполярный транзистор, NPN, 80 В, 50 МГц, 50 Вт, 10 А, 40 hFE.The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers...

Биполярный транзистор, NPN, 80 В, 50 Вт, 10 А, 40 hFE...

Биполярный транзистор, PNP, -80 В, 40 МГц, 2 Вт, -10 А, 40 hFE...

Биполярный транзистор, NPN, 400 В, 2 Вт, 8 А, 200 hFE...

DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3...