Полупроводники - Дискретные

MOSFET, P CHANNEL, -60V, -190mA, SC-89-6...

Двойной МОП-транзистор, N Канал, 305 мА, 60 В, 1.4 Ом, 10 В, 2 В.The SI1026X-T1-GE3 is a 60VDS N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.2000V Gate-source ESD protected Low ON-resistance Low threshold 15 ns Fast switching sp..

Двойной МОП-транзистор, N Канал, 305 мА, 60 В, 1.4 Ом, 10 В, 2 В.The SI1026X-T1-GE3 is a 60VDS N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.2000V Gate-source ESD protected Low ON-resistance Low threshold 15 ns Fast switching sp..

МОП-транзистор, N Канал, 140 мА, 20 В, 5 Ом, 4.5 В, 700 мВ...