Brand: ON SEMICONDUCTOR
Биполярный транзистор, универсальный, NPN, 140 В, 150 Вт, 16 А, 4 hFE.The 2N3773G is a 140V NPN PowerBase™ Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or sole..
999 ₽
Brand: VISHAY
ПТ с управляющим p-n-переходом (JFET), полевой транзистор с p-n переходом, -70 В, 30 мкА, 90 мкА.The 2N4117A-E3 is a 70V N-channel JFET provides ultra-high input impedance. This device is specified with a 1pA limit and typically operate at 0.2pA. It makes them perfect choices for use as high-impedan..
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Brand: ON SEMICONDUCTOR
Биполярный транзистор, универсальный, NPN, 25 В, 300 МГц, 625 мВт, 200 мА, 300 hFE...
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Brand: VISHAY
ПТ с управляющим p-n-переходом (JFET), полевой транзистор с p-n переходом, -57 В, 200 мкА, 600 мкА.The 2N4338-E3 is a 57V N-channel JFET in a hermetically sealed case and is designed for sensitive amplifier stages at low to mid frequencies. Low cut-off voltages accommodate low-level power supplies a..
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Brand: ON SEMICONDUCTOR
Биполярный транзистор, универсальный, NPN, 40 В, 250 МГц, 625 мВт, 600 мА, 250 hFE.The 2N4401G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications...
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